insulated gate bipolar transistor (trench igbt), 100 a gt100da120u vishay semiconductors document number: 93196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 features ? trench igbt technology with positive temperature coefficient ? square rbsoa ? 10 s short circuit capability ?hexfred ? antiparallel diodes with ultrasoft reverse recovery ?t j maximum = 150 c ? fully isolated package ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, we lding, induction heating ? easy to assemble and parallel ? direct mounting to heatsink ? plug-in compatible with other sot-227 packages ? speed 4 khz to 30 khz ? very low v ce(on) ? low emi, requires less snubbing note (1) maximum continuous collector cu rrent must be limited to 100 a to do not ex ceed the maximum temp erature of terminals product summary v ces 1200 v i c dc 100 a at 119 c v ce(on) typical at 100 a, 25 c 1.73 v sot-227 absolute maximum ratings parameter s ymbol te s t condition s max. unit s collector to em itter voltage v ces 1200 v continuous coll ector current i c (1) t c = 25 c 258 a t c = 80 c 174 pulsed collector current i cm 450 clamped inductive load current i lm 450 diode continuous forward current i f t c = 25 c 50 t c = 80 c 34 peak diode forward current i fsm 180 gate to emitter voltage v ge 20 v power dissipa tion, igbt p d t c = 25 c 893 w t c = 119 c 221 power dissipation, diode p d t c = 25 c 176 t c = 119 c 44 isolation voltage v isol any terminal to case, t = 1 min 2500 v
gt100da120u vishay semiconductors insulated gate bipolar transistor (trench igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93196 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 electrical specifications (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 250 a 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 100 a - 1.73 2.1 v ge = 15 v, i c = 100 a, t j = 125 c - 1.98 2.2 gate threshold voltage v ge(th) v ce = v ge , i c = 7.5 ma 4.9 5.9 7.9 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 17.6 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 1200 v - 0.6 100 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 0.6 10 ma forward voltage drop v fm i f = 40 a, v ge = 0 v - 2.81 3.3 v i f = 40 a, v ge = 0 v, t j = 125 c - 3.07 3.4 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter s ymbol te s t condition s min. typ. max. unit s turn-on switching loss e on i c = 100 a, v cc = 720 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 20) -5.2- mj turn-off switching loss e off -7.1- total switching loss e tot - 12.3 - turn-on switching loss e on i c = 100 a, v cc = 720 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 125 c -6.1- turn-off switching loss e off -9.8- total switching loss e tot - 15.9 - turn-on delay time t d(on) - 350 - ns rise time t r -75- turn-off delay time t d(off) - 374 - fall time t f - 493 - reverse bias safe operating area rbsoa t j = 150 c, i c = 450 a, r g = 22 ?? v ge = 15 v to 0 v, v cc = 900 v, v p = 1200 v, l = 500 h fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v rr = 400 v - 164 194 ns diode peak reverse current i rr -1215a diode recovery charge q rr - 994 1455 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v rr = 400 v, t j = 125 c - 230 273 ns diode peak reverse current i rr - 16.5 20 a diode recovery charge q rr - 1864 2730 nc short circuit safe operating area scsoa t j = 150 c, r g = 22 ? , v ge = 15 v to 0 v, v cc = 900 v, v p = 1200 v 10 s
gt100da120u insulated gate bipolar transistor (trench igbt), 100 a vishay semiconductors document number: 93196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - maximum dc igbt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics v ge = 15 v fig. 4 - maximum dc forward current vs. case temperature thermal and mechanical specifications parameter s ymbol min. typ. max. unit s maximum junction and storage temperature range t j , t stg - 40 - 150 c junction to case igbt r thjc - - 0.14 c/w diode - - 0.71 case to sink per module r thcs -0.1- mounting torque, 6-32 or m3 screw - - 1.3 nm weight - 30 - g allowable case temperature (c) i c - continuous collector current (a) 0 93196_01 40 80 120 200 160 240 280 0 160 100 120 140 20 40 60 80 i g bt dc i c (a) v ce (v) 1 10 100 1000 10 000 0.01 0.1 1 93196_02 1000 10 100 i c (a) v ce (v) 04.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 93196_03 300 100 200 275 75 175 250 50 150 225 25 125 t j = 150 c t j = 125 c t j = 25 c allowable case temperature (c) i f - continuous forwar d current (a) 40 20 10 30 50 60 0 100 160 180 0 40 60 140 80 120 20 93196_04 diode dc
gt100da120u vishay semiconductors insulated gate bipolar transistor (trench igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93196 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 5 - typical diode forward characteristics fig. 6 - typical igbt zero gate voltage collector current fig. 7 - typical igbt threshold voltage fig. 8 - typical igbt collector to emitter voltage vs. junction temperature, v ge = 15 v fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 720 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 720 v, r g = 5 ? , v ge = 15 v i f (a) v fm (v) 07 123456 0 93196_05 200 100 75 175 50 150 25 125 t j = 25 c t j = 125 c t j = 150 c i ces (ma) v ces (v) 100 1300 300 500 700 900 1100 0.00001 93196_06 10 0.1 0.01 0.001 0.0001 1 t j = 25 c t j = 125 c t j = 150 c v geth (v) i c (ma) 08 1246 357 3.0 3.5 4.0 4.5 5.0 5.5 93196_07 6.0 t j = 25 c t j = 125 c v ce (v) t j (c) 20 160 40 80 120 60 100 140 1.00 1.50 2.00 93196_08 2.75 1.25 1.75 2.25 2.50 100 a 150 a 50 a 27 a energy (mj) i c (a) 20 30 50 90 70 40 60 100 80 110 1 93196_09 11 5 9 7 3 6 10 8 4 2 e on e off switching time (ns) i c (a) 20 30 50 70 90 60 80 100 40 110 10 93196_10 1000 100 t d(off) t d(on) t f t r
gt100da120u insulated gate bipolar transistor (trench igbt), 100 a vishay semiconductors document number: 93196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 11 - typical igbt energy loss vs. r g t j = 125 c, i c = 100 a, l = 500 h, v cc = 720 v, v ge = 15 v fig. 12 - typical igbt switching time vs. r g t j = 125 c, l = 500 h, v cc = 720 v, i c = 100 a, v ge = 15 v fig. 13 - typical t rr diode vs. di f /dt v rr = 400 v, i f = 50 a fig. 14 - typical i rr diode vs. di f /dt v rr = 400 v, i f = 50 a fig. 15 - typical q rr diode vs. di f /dt v rr = 400 v, i f = 50 a energy (mj) r g ( ) 01020 40 30 50 5 93196_11 40 20 35 30 25 15 10 e on e off switching time (ns) r g ( ) 010 3040 20 50 10 93196_12 10 000 1000 100 t d(off) t d(on) t f t r t rr (ns) d i f / d t (a/s) 100 93196_13 1000 90 310 150 190 270 130 110 170 230 290 250 210 t j = 125 c t j = 25 c i rr (a) d i f / d t (a/s) 100 93196_14 1000 0 45 25 35 40 20 30 10 15 5 t j = 25 c t j = 125 c q rr (nc) d i f / d t (a/s) 100 1000 0 93196_15 3000 1000 1500 2500 2000 500 t j = 125 c t j = 25 c
gt100da120u vishay semiconductors insulated gate bipolar transistor (trench igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93196 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 16 - maximum thermal impedance z thjc characteristics (igbt) fig. 17 - maximum thermal impedance z thjc characteristics (diode) 0.001 0.01 0.1 1 0.00001 93196_16 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.001 0.01 0.1 10 1 0.00001 93196_17 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
gt100da120u insulated gate bipolar transistor (trench igbt), 100 a vishay semiconductors document number: 93196 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 fig. 18a - clamped inductive load test circuit fig. 18b - pulsed collector current test circuit fig. 19a - switching loss test circuit fig. 19b - switching lo ss waveforms test circuit * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: d u e to the 50 v power s u pply, p u lse width and ind u ctor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + - t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3
gt100da120u vishay semiconductors insulated gate bipolar transistor (trench igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93196 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 ordering information table circuit configuration 1 - insulated gate bipolar transistor (igbt) 2 - t = trench igbt technology 3 - current rating (100 = 100 a) 4 - circuit configuration (d = single switch with antiparallel diode) 5 - package indicator (a = sot-227) 6 - voltage rating (120 = 1200 v) 7 - speed/type (u = ultrafast) device code 5 13 24 67 g t 100 d a 120 u 3 (c) 2 ( g ) 1, 4 (e) link s to related document s dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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